當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRAUDAMP12
音(yin)頻(pin) IC 開(kai)發(fa)工(gong)具(ju) Two Channel 130W IR4301 40 Ohm BRD
IRAUDAMP4A
音(yin)頻(pin) IC 開(kai)發(fa)工(gong)具(ju) 120W x 2 Ch Class D IRS20957 IRF6645 BRD
IRAUDPS1
音(yin)頻(pin) IC 開(kai)發(fa)工(gong)具(ju) 250 to 1KW 12V Scale IR2085 IRF6648 BRD
IRAUDAMP21
音(yin)頻(pin) IC 開(kai)發(fa)工(gong)具(ju) 2CH 90W/2Ohm IR4321M
IRAUDAMP7S
音(yin)頻(pin) IC 開(kai)發(fa)工(gong)具(ju) 25W - 500W Scalable IRS2092 Half BRG BRD
IRF8313TRPBF
MOSFET MOSFT DUAL NCh 30V 9.7A
IRFR3708TRRPBF
MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
IRG4PC50SDPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST COPACK IGBT
IRFS38N20DTRRP
MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
IRF3546MTRPBF
MOSFET 60A Dual Intg Pwr Block
IRGS4062DPBF
IGBT 晶(jing)體(ti)管(guan) 600V Low VCEon
IRG4PC60UPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
IRG4BC40W-STRRP
IGBT 模(mu)塊(kuai) 600V 40AD2PAK
IRFS4321TRRPBF
MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC
IRFH4251DTRPBF
MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
IRG4RC10KDTRPBF
IGBT 模(mu)塊(kuai) 600V 8.500A
IRGR2B60KDTRRPBF
IGBT 晶(jing)體(ti)管(guan) 600V Low VCEon Trench IGBT
IRGR3B60KD2TRP
IGBT 晶(jing)體(ti)管(guan) IGBT DISCRETES
IRFSL7530PBF
MOSFET 60V Single N-Channel HEXFET Power
IRF3007STRLPBF
MOSFET MOSFET 75V D2PAK
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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