當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IKW40N65F5
IGBT 晶(jing)體(ti)管(guan) ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IKP15N65F5
IKP15N65H5
IKP40N65F5
IKW50N65F5
IRGS4064DTRLPBF
IGBT 晶(jing)體(ti)管(guan) 600V Low VCEon Trench IGBT
IPW60R045CPXK
MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP
IRGP30B120KD-EP
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
IKW75N60TAFKSA1
IGBT 晶(jing)體(ti)管(guan) 600V 75A 100nA
IPW65R070C6FKSA1
MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6
IRG4PC50KDPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IPW60R125CPFKSA1
MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP
IRG4PH50KPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IPA60R125CPXKSA1
MOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP
IRG4PH40KPBF
IPI60R165CPXKSA1
MOSFET N-Ch 650V 21A I2PAK-3
IRF3575DTRPBF
MOSFET 60A Exposed Top Intg Pwr Block
IPI60R199CPXKSA2
MOSFET HIGH POWER_LEGACY
IPP05CN10N G
MOSFET N-Ch 100V 100A TO220-3 OptiMOS 2
IPP60R160C6XKSA1
MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)