當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPB029N06N3GE8187ATMA1
MOSFET N-Ch 60V 120A D2PAK-2
IPP60R380C6
MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6
IPB50N12S3L15ATMA1
MOSFET N-CHANNEL 100+
IPA50R190CEXKSA2
MOSFET CONSUMER
IPB70N10S3-12
MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
IRFB7740PBF
MOSFET 75V Single N-Channel HEXFET Power
IPB17N25S3100ATMA1
MOSFET N-Ch 250V 17A D2PAK-2
IPA60R600C6
MOSFET N-Ch 650V 7.3A TO220FP-3 CoolMOS C6
IPI90R1K2C3
MOSFET N-Ch 900V 5.1A I2PAK-3 CoolMOS C3
IPA90R1K2C3XKSA1
MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3
IPP100N08N3GXKSA1
MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3
IPA60R360P7XKSA1
MOSFET
IPB037N06N3 G
MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
IPB037N06N3GATMA1
IPB50N10S3L-16
IRF3710ZLPBF
MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
IPP052N06L3 G
MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3
IPD80P03P4L07ATMA1
MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
IPD60R600P6ATMA1
MOSFET LOW POWER_LEGACY
IPD35N12S3L24ATMA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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