當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPL65R195C7
MOSFET HIGH POWER BEST IN CLASS
IPB160N08S403ATMA1
MOSFET N-CHANNEL 75/80V
IPL60R185C7AUMA1
MOSFET HIGH POWER_NEW
IPB031N08N5ATMA1
MOSFET N-Ch 80V 120A D2PAK-2
IPB031N08N5
IPP80R280P7XKSA1
MOSFET
IPW60R180P7XKSA1
IPL60R210P6
MOSFET LOW POWER PRICE/PERFORM
IPB200N15N3 G
MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
IPB320N20N3GATMA1
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
IPB320N20N3 G
IPP320N20N3 G
MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3
IPP320N20N3GXKSA1
IKB15N65EH5ATMA1
IGBT 晶(jing)體(ti)管(guan) Infineon s 650 V, 15 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
IPD60R170CFD7ATMA1
IPD65R250E6
MOSFET N-Ch 700V 16.1A DPAK-2
IPW60R280P6
MOSFET N-Ch 600V 13.8A TO247-3
IPB039N10N3GATMA1
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IRFB4710PBF
MOSFET MOSFT 100V 75A 14mOhm 110nC
IPP60R190P6
MOSFET HIGH POWER_PRC/PRFRM
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)