當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPD400N06N G
MOSFET N-Ch 60V 27A DPAK-2
IRFHM8329TRPBF
MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
IRF8707GTRPBF
MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC
IPW65R037C6
MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6
IPW65R070C6
MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6
IRG4PC50UDPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast 8-60kHz
IRG4PF50WDPBF
IGBT 晶(jing)體(ti)管(guan) 900V Warp 20-100kHz
IRG4PH50KDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
IPP60R099CPXKSA1
MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP
IPB60R099CP
MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
IRG4PF50WPBF
IRG4PC50UPBF
IPP60R099C6
MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6
IPA60R099C6
MOSFET N-Ch 600V 38A TO220FP-3 CoolMOS C6
IPP60R125CPXKSA1
MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP
IRGP20B60PDPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp2 150kHz
IRG4BC40W-SPBF
IGBT 晶(jing)體(ti)管(guan) 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BC30KDSTRLP
IGBT 模(mu)塊(kuai) 600V 23A
IRG4BC40UPBF
IRG4BC30KD-SPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-25 KHZ COPACK IGBT
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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