當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IGP20N65H5
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop 5
IKP15N65H5XKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IGW50N65F5FKSA1
IHW20N120R5
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop
IRFB3207PBF
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
IPW65R048CFDA
MOSFET N-Ch 650V 63.3A TO247-3
IRGP4660D-EPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast IGBT 60A 330W 140nC
IRGP4660DPBF
IKW40N120H3
IPW60R099CPA
MOSFET AUTOMOTIVE
IPI200N25N3 G
MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3
IPB64N25S3-20
MOSFET N-Ch 250V 64A D2PAK-2
IPW65R110CFDFKSA1
MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
IPI041N12N3 G
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
IHW20N135R3FKSA1
IPI030N10N3GXKSA1
MOSFET N-Ch 100V 100A I2PAK-3
IHW30N120R3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop RC
IHW30N110R3
IPW60R125P6
MOSFET HIGH POWER PRICE/PERFORM
IGW50N65H5
IGBT 晶(jing)體(ti)管(guan) ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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