當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRF640NLPBF
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
IPB123N10N3GATMA1
MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPP083N10N5AKSA1
MOSFET N-Ch 100V 73A TO220-3
IPD038N06N3 G
MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
IRLB3813PBF
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
IRFB23N15DPBF
MOSFET MOSFT 150V 23A 90mOhm 37nC
IPI147N12N3 G
MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
IPB144N12N3GATMA1
MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
IRF4104PBF
MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg
IPD80R2K7C3AATMA1
MOSFET AUTOMOTIVE
IKD10N60RATMA1
IGBT 晶體管 IGBT w/ INTG DIODE 600V 20A
IPB530N15N3 G
MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
IPB054N08N3GATMA1
MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
IPP037N06L3 G
MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3
IPA086N10N3 G
MOSFET N-Ch 100V 45A TO220FP-3 OptiMOS 3
IRFB7440PBF
MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W
IPP147N12N3 G
MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
IPB100N04S4H2ATMA1
MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
IGP10N60TXKSA1
IGBT 晶體管 LOW LOSS IGBT TECH 600V 10A
IRF3710ZPBF
MOSFET MOSFT 100V 59A 18mOhm 82nC Qg
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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