當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRF540NSTRLPBF
MOSFET MOSFT 100V 33A 44mOhm 47.3nC
IRF3710PBF
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
IRFR3411TRPBF
MOSFET MOSFT 100V 32A 44mOhm 48nC
IPG20N10S436AATMA1
MOSFET N-CHANNEL 100+
IRLU2905ZPBF
MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl
IPD80R1K0CEATMA1
MOSFET N-Ch 800V 5.7A DPAK-2
IRF6655TRPBF
MOSFET 100V 1 N-CH HEXFET DIRECTFET SH
IRLI540NPBF
MOSFET MOSFT 100V 20A 44mOhm 49.3nC LogLvl
IRF3205ZPBF
MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg
IRFIZ34NPBF
MOSFET MOSFT 55V 19A 40mOhm 22.7nC
IPG20N04S4L08ATMA1
MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
IRFH5406TRPBF
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC
IKD06N60RFATMA1
IGBT 晶體管 IGBT PRODUCTS
IRFR1010ZTRPBF
MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
IKD06N60RATMA1
IGBT 晶體管 IGBT w/ INTG DIODE 600V 12A
IRFR5410TRPBF
MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
IRF3205PBF
MOSFET MOSFT 55V 98A 8mOhm 97.3nC
IRFR8314TRPBF
MOSFET 30V 179A 2.2 mOhm 36 nC Qg
IRLR7843TRPBF
MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
IRF7910TRPBF
MOSFET MOSFT DUAL NCh 12V 10A
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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