當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IKW75N65EL5XKSA1
IGBT 晶體管 650V IGBT Trenchstop 5
IPB60R060C7ATMA1
MOSFET HIGH POWER_NEW
IPA60R060C7XKSA1
IPT111N20NFDATMA1
MOSFET
IRL60S216
MOSFET "60V, 298A, 1.95 mOhm 170 NC Qg"
IRL60SL216
MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg
IKW50N60DTPXKSA1
IGBT 晶體管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IPB100N12S305ATMA1
MOSFET N-CHANNEL 100+
IHW25N120E1XKSA1
IGBT 晶體管 IGBT PRODUCTS
IRL60B216
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
IKW30N65H5XKSA1
IGBT 晶體管 Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
IPT60R150G7XTMA1
MOSFET HIGH POWER NEW
IPLU300N04S41R1XTMA1
MOSFET N-CHANNEL_30/40V
IPT65R195G7XTMA1
IRL40B209
MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl
IPD60R180C7ATMA1
IRF7780MTRPBF
MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og
IPC100N04S51R2ATMA1
IPD042P03L3GATMA1
MOSFET SMALL SIGNAL+P-CH
IPD530N15N3GATMA1
MOSFET MV POWER MOS
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