當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSS209PWH6327XTSA1
MOSFET P-Ch -20V -630mA SOT-323-3
BSS138N H6327
MOSFET N-Ch 60V 230mA SOT-23-3
BSS138NH6327XTSA2
BSS84PW H6327
MOSFET P-Ch -60V 150mA SOT-323-3
BFP 640F H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP 720ESD H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BFP 405 H6327
BFP193E6327HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BSZ033NE2LS5ATMA1
MOSFET LV POWER MOS
BSC014N06NSTATMA1
MOSFET DIFFERENTIATED MOSFETS
BSC600N25NS3 G
MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
BSC028N06NSATMA1
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
BSP135 H6906
MOSFET N-Ch 600V 20mA SOT-223-3
BSC014N03LS G
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC014NE2LSIXT
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSO033N03MS G
MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M
BSZ123N08NS3 G
MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
BSC252N10NSF G
MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC160N10NS3 G
MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
BSP129 H6906
MOSFET N-Ch 240V 50mA SOT-223-3
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