當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BFP420FH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP840FESDH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BFR181E6327HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BFP196E6327HTSA1
BFP640H6327XTSA1
BFR360FH6327XTSA1
BFR183E6327HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN RF Transistor 12V 65mA 450mW
BFP650H6327XTSA1
BSP89H6327XTSA1
MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA
BFP 196 E6327
BFP450H6327XTSA1
BFP 193 E6327
BFR92PE6327HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) TRANS GP BJT NPN 15V 0.045A
BSC060N10NS3 G
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSC010N04LSI
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSB044N08NN3 G
MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSC014N06NS
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
BSC046N10NS3 G
MOSFET N-Ch 100V 100A TDSON-8
BSC016N06NS
MOSFET N-Ch 60V 100A DSON-8 OptiMOS
BSC0910NDI
MOSFET TRANSITIONAL MOSFETS
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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