當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BFP650FH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFS 483 H6327
BFQ19SH6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結型(xing)晶(jing)體(ti)管(guan)(BJT) RF BIP TRANSISTORS
BFR 93AW H6327
BFS 481 H6327
BFP 183 E7764
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BFR740L3RHE6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicn Germanium RF Transistor
BFR106E6327HTSA1
BFR 106 E6327
BFR 93A E6327
BFR93AE6327HTSA1
BFP420H6327XTSA1
BTS244ZE3062AATMA2
MOSFET N-Ch 55V 19A D2PAK-4
BTS247ZE3062AATMA2
BSZ025N04LS
MOSFET MV POWER MOS
BSC022N04LS
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSO604NS2
MOSFET N-Ch 55V 5A DSO-8 OptiMOS
BSO207P H
MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P
BSO211P H
MOSFET SMALL SIGNAL N-CH
BSO203SPHXUMA1
MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P
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